李耀义 特别研究员 Yaoyi Li, Distinguished Researcher
724, No. 5, New Science Building, 800 Dongchuan Road, Shanghai, 200240
Email: yaoyili@sjtu.edu.cn
Biographical Sketch:
Education:
Sep 2001 – Jun 2005, B.S. in Physics,
Department of Physics, Wuhan University, Hubei, P. R. China
Sep 2005 – Aug 2007, Ph.D. Candidate,
State Key Laboratory for Surface Physics,
Institute of Physics, Chinese Academy of Sciences, Beijing, P. R. China
Sep 2007 – Jan 2011, Ph.D. in Physics,
Department of Physics, Tsinghua University, Beijing, P. R. China
Employment:
Feb 2011 – June 2015
Postdoctoral Research Associate,Department of Physics, University of Wisconsin-Milwaukee, WI, USA
July 2015 – Present
Distinguished Research Fellow,
Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, P. R. China
Research Interests:
1. Scanning Tunneling Microscopy/ Spectroscopy
2. MBE Growth of Nanostructure
3. Quantum Topological Matter
Selected Publications:
- Y. Y. Li, M. X. Chen, M. Weinert, and L. Li*, Direct Experimental Determination of Onset of Electron–Electron Interactions in Gap Opening of Zigzag Graphene Nanoribbons, Nature Communications 5, 4311 (2014).
- Y. Liu, Y. Y. Li, S. Rajput, D. Gilks, L. Lari, P. L. Galindo, M. Weinert, V. K. Lazarov* and L. Li*, Tuning Dirac States by Strain in the Topological Insulator Bi2Se3, Nature Physics 10, 294 (2014). (Cover Article)
- S. Rajput*, Y. Y. Li, and L. Li, Direct Experimental Evidence for the Reversal of Carrier Type upon Hydrogen Intercalation in Epitaxial Graphene-SiC(0001), Applied Physics Letters 104, 041908 (2014).
- S. Rajput, M. X. Chen, Y. Liu, Y. Y. Li, M. Weinert, and L. Li*, Spatial Fluctuations in Barrier Height at the Graphene-Silicon Carbide Schottky Junction, Nature Communications 4, 2752 (2013).
- Y. Liu, Y. Y. Li, D. Gilks, V. K. Lazarov, M. Weinert, and L. Li*, Charging Dirac States at Antiphase Domain Boundaries in the Three-Dimensional Topological Insulator Bi2Se3, Physical Review Letters 110, 186804 (2013). (Cover Article)
- G. Wang, X. G. Zhu, Y. Y. Sun, Y. Y. Li, T. Zhang, J. Wen, X. Chen, K. He, L. L. Wang, X. C. Ma, J. F. Jia, S. B. Zhang*, and Q. K. Xue*,Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure, Advanced Materials 23, 2929 (2011).
- Y. Y. Li, G. Wang, X. G. Zhu, M. H. Liu, C. Ye, X. Chen, Y. Y. Wang, K. He, L. L. Wang, X. C. Ma, H. J. Zhang, X. Dai, Z. Fang, X. C. Xie, Y. Liu, X. L. Qi, J. F. Jia*, S. C. Zhang, and Q. K. Xue, Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit,Advanced Materials 22, 4002 (2010).
- Y. Y. Li, M. Liu, D. Y. Ma, D. C. Yu, X. Chen, X. C. Ma, Q. K. Xue, K. W. Xu, J. F. Jia*, and F. Liu*, Bistability of Nanoscale Ag Islands on a Si(111)-(4×1)-In Surface Induced by Anisotropic Stress, Physical Review Letters 103, 076102 (2009).